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Comparison of Monte Carlo and Deterministic Simulations of a Silicon DiodeUniversidad de GranadaIrene M. GambaUniversity of Texas at AustinOrazio Musca
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Comparison of Monte Carlo and Deterministic Simulations of a Silicon DiodeUniversidad de GranadaIrene M. GambaUniversity of Texas at AustinOrazio Musca
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The length of the microtubes fixed to a silicon nitride surface ranged A.G. LeyvaM. GranadaD.F. RodriguezH.E. Troiani
In this work, we introduce the mobility vs. effective electric field representation for bare silicon-on-insulator substrates. The key factors determining the
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Accurate Determination of Silicon Inversion Layer Mobility by the Monte Carlo Universidad de Granada Campus Universitario FuentenuevaJ. Banqueri
The length of the microtubes fixed to a silicon nitride surface ranged A.G. LeyvaM. GranadaD.F. RodriguezH.E. Troiani
